absolute maximum ratings symbol parameter value units v ces collector-emitter voltage ( v be = 0 ) 700 v v ceo collector-emitter voltage ( i b = 0 ) 400 v v ebo emitter-base voltage ( i c = 0 ) 9.0 v i c collector current 8.0 a i cm collector peak current ( t p 5 ms ) 16 a i b base current 4.0 a i bm base peak current ( t p 5 ms ) 8.0 a p c total dissipation at t c = 25 c 36 w t stg storage temperature - 65 ~ 150 c t j max. operating junction temperature 150 c thermal characteristics symbol parameter value units r jc thermal resistance, junction-to-case 3.47 c/w SBF13007 1/6 c c features - very high switching speed (typical 60ns@5.0a) - minimum lot-to-lot hfe variation - low vce(sat) (typical 390mv@5.0a/1.0a) - wide reverse bias s.o.a general description this device is designed for high voltage, high speed switching char- acteristic required such as light ing system, switch ing mode power supply. high voltage fast-switching npn power transistor 2.collector 3.emitter 1.base symbol to-220f semiwell semiconductor 1 2 3 copyright@semiwell semiconductor co., ltd., all rights reserved oct, 2002. rev. 2
electrical characteristics ( t c = 25 c unless otherwise noted ) symbol parameter condition min typ max units i cev collector cut-off current ( v be = - 1.5v ) v ce = 700v v ce = 700v t c = 100 c - - 1.0 5.0 ma v ceo(sus) collector-emitter sustaining voltage ( i b = 0 ) i c = 10 ma 400 -- v v ce(sat) collector-emitter saturation voltage i c = 2.0a i b = 0.4a i c = 5.0a i b = 1.0a i c = 8.0a i b = 2.0a i c = 5.0a i b = 1.0a t c = 100 c - - 0.5 1.0 2.5 2.5 v v be(sat) base-emitter saturation voltage i c = 2.0a i b = 0.4a i c = 5.0a i b = 1.0a i c = 5.0a i b = 1.0a t c = 100 c -- 1.2 1.6 1.5 v h fe dc current gain i c = 2.0a v ce = 5v i c = 5.0a v ce = 5v 10 5- 40 40 t s t f resistive load storage time fall time i c = 5.0a v cc = 125v i b1 = 1.0a i b2 = - 1.0a t p = 25 ? - 1.5 0.17 3.0 0.4 ? t s t f inductive load storage time fall time v cc = 15v i c = 5.0a i b1 = 1.0a i b2 = -2.5a l c = 0.35mh v clamp = 300v - 0.8 0.06 2.0 0.12 ? t s t f inductive load storage time fall time v cc = 15v i c = 5.0a i b1 = 1.0a i b2 = -2.5a l c = 0.35mh v clamp = 300v t c = 100 c - 1.0 0.07 3.0 0.15 ? SBF13007 2/6 notes : pulse test : pulse width 300 ? , duty cycle 2%
012345678 1 10 t j = 25 o c t, time [us] i c , collector current [a] 0246810 10 100 1000 t j = 25 o c t, time [ns] i c , collector current [a] 0.1 1 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 t j = 25 o c t j = 125 o c v be , base-emitter voltage [v] i c , collector current [a] 0.1 1 10 0.01 0.1 1 10 t j = 25 o c t j = 125 o c v ce , collector-emitter voltage [v] i c , collector current [a] 0.01 0.1 1 10 0 5 10 15 20 25 30 35 40 45 t j = 125 o c t j = 25 o c h fe , dc current gain i c , collector current [a] 012345678910 0 2 4 6 8 10 12 i b = 200ma i b = 2000ma i b = 1600ma i b = 1200ma i b = 1000ma i b = 800ma i b = 600ma i b = 400ma i b = 0ma i c , collector current [a] v ce , collector-emitter voltage [v] SBF13007 3/6 fig 1. static characteristics fig 2. dc current gain fig 3. collector-emitter saturation voltage fig 4. base-emitter saturation voltage fig 5. resistive load fall time fig 6. resistive load storage time notes : v cc = 125v h fe = 5 i b1 = - i b2 notes : v cc = 125v h fe = 5 i b1 = - i b2 notes : v ce = 5v v ce = 1v note : h fe = 5 note : h fe = 5
0 100 200 300 400 500 600 700 800 2 4 6 8 10 -3v -1.5v -5v v be (off) i c , collector current [a] v ce , collector-emitter clamp voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 s 10 s 1ms 500 s dc i c , collector current [a] v ce , collector-emitter clamp voltage [v] 0 50 100 150 200 0 25 50 75 100 125 power derating factor (%) t c , case temperature ( o c) 4/6 SBF13007 fig 8. reverse biased safe operation areas fig 7. safe operation areas fig 9. power derating curve single pulse notes : t j 100 c i b1 = 2 a r bb = 0 ? l c = 0.2mh
i b1 v be (off) r bb i b i c v clamp v cc v ce d.u.t l c f i b1 v be (off) r bb i b i c v cc v ce d.u.t r c SBF13007 5/6 inductive load switching & rbsoa test circuit resistive load switching test circuit
dim. mm inch min. typ. max. min. typ. max. a 10.4 10.6 0.409 0.417 b 6.18 6.44 0.243 0.254 c 9.55 9.81 0.376 0.386 d 13.47 13.73 0.530 0.540 e 6.05 6.15 0.238 0.242 f 1.26 1.36 0.050 0.054 g 3.17 3.43 0.125 0.135 h 1.87 2.13 0.074 0.084 i 2.57 2.83 0.101 0.111 j2.54 0.100 k5.08 0.200 l 2.51 2.62 0.099 0.103 m 1.23 1.36 0.048 0.054 n 0.45 0.63 0.018 0.025 o 0.6 1.0 0.023 0.039 3.7 0.146 1 3.2 0.126 2 1.5 0.059 to-220f package dimension 1. base 2. collector 3. emitter a b c i g l 1 m e f 1 h k n o 2 3 j d 2 6/6 SBF13007
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